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JOURNALS // Kvantovaya Elektronika // Archive
Kvantovaya Elektronika, 2020 Volume 50, Number 3, Pages 299–304 (Mi qe17209)
This article is cited in 5 papers

Laser applications and other topics in quantum electronics

Nanodiamonds with SiV colour centres for quantum technologies

A. I. Zeleneevabc, S. V. Bolshedvorskiiadc, V. V. Soshenkodc, O. R. Rubinasabdc, A. S. Garaninae, S. G. Lyapinf, V. N. Agafonove, R. E. Uzbekove, O. S. Kudryavtsevg, V. N. Sorokinbd, A. N. Smolyaninovc, V. A. Davydovf, A. V. Akimovbdh

a Moscow Institute of Physics and Technology (National Research University)
b Russian Quantum Center, Moscow, Skolkovo
c Photonic Nano-Meta Technologies, Moscow, Skolkovo
d P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
e University of Tours, France
f Institute for High Pressure Physics, Russian Academy of Sciences, Moscow, Troitsk
g Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
h Texas A&M University, USA

Abstract: Properties of silicon-vacancy (SiV) colour centres in ultra-nanosize diamonds are studied. Nanodiamonds are obtained at a high temperature and pressure, which induced transformations in mixtures of organic and hetero-organic compounds without metal-catalysts. The size distribution of grown nanodiamonds is determined by the methods of transmission electron microscopy and atomic-force microscopy, as well as by using the model of phonon spatial localisation. In addition, Raman spectra of various nanodiamonds and luminescence properties of SiV-centres are investigated.

Keywords: nanodiamonds, SiV colour centre, stresses in a crystal lattice, Raman spectroscopy, luminescence spectroscopy, probe microscopy.

Received: 14.11.2019
Revised: 19.12.2019


 English version: Quantum Electronics, 2020, 50:3, 299–304

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© Steklov Math. Inst. of RAS, 2024