A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, M. A. Belkin, V. P. Konyaev, “Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers”, Kvantovaya Elektronika, 2000, Volume 30, Number 4,Pages <nobr>315

This article is cited in 5 papers

Lasers

Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers

A. P. Bogatov^a, A. E. Boltaseva^b, A. E. Drakin^a, M. A. Belkin^b, V. P. Konyaev^c

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
^c "Polyus" Research Institute, Federal State Enterprise, Moscow

Abstract: A technique to determine experimentally the amplitude—phase coupling factor (α factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs/GaAs single-quantum-well lasers with injected-carrier concentrations from 1.5 × 10¹⁸ to 6 × 10¹⁸ cm^-3. It is shown that the α factor for such structures at the maximum of mode gain lies in the range 2 — 9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser.

PACS: 42.55.Px, 85.30.Vw, 42.60.Mi

Received: 28.10.1999