K. Yu. Telegin, M. A. Ladugin, A. Yu. Andreev, I. V. Yarotskaya, N. A. Volkov, A. A. Padalitsa, A. V. Lobintsov, A. N. Aparnikov, S. M. Sapozhnikov, A. A. Marmalyuk, “The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers”, Kvantovaya Elektronika, 2020, Volume 50, Number 5,Pages <nobr>489

This article is cited in 4 papers

Lasers, control of laser radiation parameters

The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers

K. Yu. Telegin^a, M. A. Ladugin^a, A. Yu. Andreev^a, I. V. Yarotskaya^a, N. A. Volkov^a, A. A. Padalitsa^a, A. V. Lobintsov^a, A. N. Aparnikov^a, S. M. Sapozhnikov^a, A. A. Marmalyuk^ab

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b National Engineering Physics Institute "MEPhI", Moscow

Abstract: The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser diode bars with undoped and doped waveguide layers are experimentally fabricated and compared. It is shown that the latter type of structures with a broadened waveguide allows one to increase the output power of the laser diode bars by 10% – 15%, all other conditions being equal.

Keywords: semiconductor laser, laser diode bar, waveguide, doping, output power.

Received: 24.01.2020