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Kvantovaya Elektronika, 2020 Volume 50, Number 6, Pages 600–602 (Mi qe17259)

This article is cited in 1 paper

Lasers

1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide

O. O. Bagaeva, A. I. Danilov, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, Yu. V. Kurnyavko, M. A. Ladugin, A. A. Marmalyuk, V. I. Romantsevich, Yu. L. Ryaboshtan, V. A. Simakov, V. N. Svetogorov, R. V. Chernov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: High-power 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide are developed and their current – voltage, light – current, and spectral characteristics are experimentally studied. The characteristics of these lasers are compared with the characteristics of traditional lasers based on double separate-confinement heterostructures. It is shown that the developed lasers have lower divergence and almost the same threshold and power characteristics as conventional lasers with Fabry – Perot resonators. The developed lasers with a cavity length of 1.6 mm and a mesa-stripe contact width of 3 μm mounted in a housing 11 mm in diameter have a power no lower than 200 mW at a pump current not exceeding 700 mA with a divergence of 25 – 35° versus 45° typical for conventional lasers.

Keywords: semiconductor laser, periodic optically coupled waveguide, current – voltage, light – current, and spectral characteristics; wavelength 1.5 – 1.6 μm.

Received: 25.02.2020
Revised: 11.03.2020


 English version:
Quantum Electronics, 2020, 50:6, 600–602

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© Steklov Math. Inst. of RAS, 2024