D. R. Sabitov, Yu. L. Ryaboshtan, V. N. Svetogorov, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, M. G. Vasil'ev, A. M. Vasil'ev, Yu. O. Kostin, A. A. Shelyakin, “Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells”, Kvantovaya Elektronika, 2020, Volume 50, Number 9,Pages <nobr>830

This article is cited in 3 papers

Lasers, active media

Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells

D. R. Sabitov^a, Yu. L. Ryaboshtan^a, V. N. Svetogorov^a, A. A. Padalitsa^a, M. A. Ladugin^a, A. A. Marmalyuk^ab, M. G. Vasil'ev^c, A. M. Vasil'ev^c, Yu. O. Kostin^c, A. A. Shelyakin^c

^a "Sigm Plyus" Ltd., Moscow
^b National Engineering Physics Institute "MEPhI", Moscow
^c Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow

Abstract: Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is analysed. It is shown that such a design of a superluminescent diode allows an optical power of more than 5 mW, a radiation spectrum width of more than 60 nm, a degree of output radiation polarisation up to 30 dB to be obtained at the output of a single-mode fibre, and has a great potential for further improvement.

Keywords: superluminescent diode, quantum well, elastic strain compensation, AlGaInAs/InP.

Received: 01.06.2020
Revised: 19.06.2020