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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2020 Volume 50, Number 11, Pages 1001–1003 (Mi qe17351)

This article is cited in 3 papers

Lasers

Triple integrated laser–thyristor

T. A. Bagaeva, M. A. Ladugina, A. A. Padalitsaa, A. A. Marmalyuka, Yu. V. Kurnyavkoa, A. V. Lobintsova, A. I. Danilova, S. M. Sapozhnikova, V. V. Krichevskiia, V. P. Konyaeva, V. A. Simakova, S. O. Slipchenkob, A. A. Podoskinb, N. A. Pikhtinb

a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b Ioffe Institute, St. Petersburg

Abstract: A triple laser–thyristor, i. e., a semiconductor laser with three emitting sections monolithically integrated with an electronic switch (thyristor) is experimentally studied. For comparison, the output characteristics of single and double laser–thyristors are presented. It is shown that the functional integration of a laser with a thyristor in one heterostructure allows the laser to efficiently operate in a pulsed regime (output power ~50 W), the use of vertical integration of two laser sections increases the power to ~90 W, and the integration of three laser sections makes it possible to increase the output optical power to ~120 W with all other conditions being the same.

Keywords: integrated laser–thyristor, output power, heterostructure, quantum well.

Received: 14.07.2020
Revised: 24.08.2020


 English version:
Quantum Electronics, 2020, 50:11, 1001–1003

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© Steklov Math. Inst. of RAS, 2024