AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier

Semiconductor lasers based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide and an increased electron barrier layer are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Additional use of strained wide-bandgap layers as blocking barriers limiting electron leakage from the active region makes it possible to increase the output power at the same pump current. The developed lasers with a stripe contact 100 μm wide demonstrate at room temperature an output optical power of 4.0–4.4 W (pump current 14 A) in a continuous-wave regime and 15–17 W (100 A) in a pulsed regime (100 ns, 1 kHz) at wavelengths of 1450–1500 nm.