Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures

Pulsed radiative characteristics of high-power semiconductor lasers based on an asymmetric InGaAs/AlGaAs/GaAs heterostructure with an active region including two quantum wells and a gradient waveguide on the side of the p-emitter are studied. It is shown that the use of the proposed design allows efficient laser operation under pumping by 100-ns current pulses in the temperature range 25 – 90 °C. The lasers with a Fabry–Perot cavity 2900 μm long demonstrated peak powers of 62 W (injection current 123 A) and 43 W (122 A) at temperatures of 25 and 90 °C, respectively. It is found that at room temperature and currents of ~50A, a decrease in the cavity length to 600 μm does not cause a decrease in the output power with respect to the power of lasers with a long (2900 μm) cavity. An increase in temperature to 90 °C at high injection currents leads to a sharp decrease in the radiative efficiency of lasers with a short (600 μm) cavity and to the change of their operation regime to the two-band lasing.