Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides

Semiconductor lasers based on AlGaInAs/InP heterostructures with ultra-narrow and asymmetric waveguides are comparatively studied. It is shown that the use of these waveguides with a simultaneous increase in the quantum well depth makes it possible to increase output powers. Such lasers based on both strongly asymmetric and ultra-narrow waveguides with a stripe contact width of 100 μm demonstrate an output power of 5 W (at pump currents of 11.5 and 14 A, respectively) in a continuous-wave regime at room temperature and a wavelength of 1450–1500 nm.