P. G. Eliseev, H. Li, G. T. Liu, A. Shtints, T. C. Newell, L. E. Lester, K. J. Malloy, “Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model”, Kvantovaya Elektronika, 2000, Volume 30, Number 8,Pages <nobr>664

This article is cited in 10 papers

Lasers

Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model

P. G. Eliseev^a, H. Li^b, G. T. Liu^b, A. Shtints^b, T. C. Newell^b, L. E. Lester^b, K. J. Malloy^b

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Centre for High Technology Materials, University of New Mexico, USA

Abstract: The dependence of the mode optical gain on current in InAs/InGaAs quantum-dot structures grown by the method of molecular-beam epitaxy is obtained from the experimental study of ultra-low-threshold laser diodes. The record lowest inversion threshold at room temperature was about 13 A cm². A theoretical model is proposed that relates the optical gain to the ground-state transitions in quantum dots. The effective gain cross section is estimated to be ~7 × 10^–15 cm^–2.

PACS: 42.55.Px, 42.60.Jf

Received: 23.03.2000