N. A. Volkov, T. A. Bagaev, D. R. Sabitov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, N. A. Rudova, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, “InGaAs/AlGaAs/GaAs semiconductor lasers (<nobr>$\lambda$</nobr> = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics”, Kvantovaya Elektronika, 2021, Volume 51, Number 10,Pages <nobr>905

This article is cited in 3 papers

Lasers

InGaAs/AlGaAs/GaAs semiconductor lasers ($\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics

N. A. Volkov^a, T. A. Bagaev^a, D. R. Sabitov^a, A. Yu. Andreev^a, I. V. Yarotskaya^a, A. A. Padalitsa^a, M. A. Ladugin^a, A. A. Marmalyuk^ab, K. V. Bakhvalov^c, D. A. Veselov^c, A. V. Lyutetskiy^c, N. A. Rudova^c, V. A. Strelets^c, S. O. Slipchenko^c, N. A. Pikhtin^c

^a "Sigm Plyus" Ltd., Moscow
^b National Engineering Physics Institute "MEPhI", Moscow
^c Ioffe Institute, St. Petersburg

Abstract: Semiconductor lasers based on double separate-confinement InGaAs/AlGaAs/GaAs heterostructures with a broadened waveguide are studied. The experimentally obtained samples of lasers with undoped and doped waveguide layers are compared. The differences in their current–voltage characteristics are analysed. It is found that a decrease in the series resistance and the cutoff voltage of the current–voltage characteristic makes it possible to delay the beginning of the output optical power saturation and increase the efficiency of the studied semiconductor lasers to 70% – 72%.

Keywords: semiconductor laser, asymmetric waveguide, doping, output power.

Received: 22.06.2021