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Kvantovaya Elektronika, 2021 Volume 51, Number 10, Pages 912–914 (Mi qe17924)

This article is cited in 3 papers

Lasers

High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm

T. A. Bagaevab, N. V. Gul'tikova, M. A. Ladugina, A. A. Marmalyuka, Yu. V. Kurnyavkoa, V. V. Krichevskiia, A. M. Morozyuka, V. P. Konyaeva, V. A. Simakova, S. O. Slipchenkoc, A. A. Podoskinc, N. A. Pikhtinc, A. E. Kazakovac, D. N. Romanovichc, V. A. Kryuchkovc

a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b Peoples' Friendship University of Russia, Moscow
c Ioffe Institute, St. Petersburg

Abstract: High-power hybrid semiconductor lasers-thyristors ($\lambda$ = 900 – 920 nm) consisting of thyristor crystals soldered in series with an integrated semiconductor laser with three emitting sections are studied. A monolithic laser-thyristor with three emitting sections is used as a reference sample. The output power of the triple monolithically integrated laser-thyristor is $\sim$120 W at a turn-on voltage of 18 V. The turn-on voltage of a hybrid laser–thyristor with three emitting sections is 28 V, and the peak output power reaches $\sim$170 W.

Keywords: integrated laser-thyristor, hybrid laser-thyristor, output power.

Received: 11.08.2021


 English version:
Quantum Electronics, 2021, 51:10, 912–914

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© Steklov Math. Inst. of RAS, 2024