Semiconductor lasers with improved radiation characteristics

The characteristics of semiconductor emitters based on separate-confinement double heterostructures with quantum wells and different configurations of waveguide layers are examined. Lasers with thin and thick waveguides are considered to solve the problem of increasing the output power. Semiconductor emitters with undoped and doped waveguide layers are compared. Lasers with an ultrathin and thickened highly asymmetric waveguide are discussed. It is shown that a decrease in series and thermal resistance reduces the self-heating of lasers and has a positive effect on increasing the output power and efficiency. The prospects for using epitaxial integration to fabricate lasers with several tunnel-coupled emitting sections in order to increase the output power and brightness are demonstrated. The possibility of producing monolithic-integrated laser-thyristors combining an emitting section and an electronic switch in a single crystal is shown.