V. E. Fedyai, A. Tarasova, A. Eliseev, L. Isaenko, P. Krinitsyn, S. A. Babin, A. Kuchmizhak, A. V. Dostovalov, “Creation of anti-reflective microstructures on the surface of BaGa2Se7 nonlinear crystals by femtosecond laser radiation”, Kvantovaya Elektronika, 2024, Volume 54, Number 7,Pages 430

A selection of papers presented at the International Seminar on Fiber Lasers (August 19-25, 2024, Novosibirsk)

Creation of anti-reflective microstructures on the surface of BaGa₂Se₇ nonlinear crystals by femtosecond laser radiation

V. E. Fedyai^ab, A. Tarasova^ac, A. Eliseev^ac, L. Isaenko^ac, P. Krinitsyn^ac, S. A. Babin^ab, A. Kuchmizhak^de, A. V. Dostovalov^ab

^a Novosibirsk State University
^b Institute of Automation and Electrometry, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
^d Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
^e Far Eastern Federal University, Vladivostok

Abstract: The possibility of creating anti-reflective microstructures (ARM) on the surface of BaGa₂Se₇ semiconductor nonlinear crystals using IR laser pulses is considered. The formation of ARM by the femtosecond laser dot recording method, as well as by the method based on the effect of the formation of laser-induced periodic surface structures (LIPSS) by femtosecond/picosecond laser radiation, has been studied. The maximum increase in the transmission of the BaGa2Se7 nonlinear crystal (when processed on one side compared to the original untreated surface) was 17% and more than 9% for the dot recording method and the LIPSS-based method, respectively.

Keywords: BaGa₂Se₇ crystal, antireflective microstructures, femtosecond laser ablation, IR range, laser-induced periodic surface structures.

Received: 23.10.2024