InP/InGaAs-based avalanche photodiodes for single-photon detectors in the 1550 nm spectral range

The paper presents the results of investigating the static characteristics of avalanche photodiodes (APD) fabricated from an InP/InGaAs heterostructure grown by metal organic vapor phase epitaxy, followed by single-stage zinc diffusion from a metal organic source of diethylzinc. The fabricated APDs have demonstrated at room temperature a breakdown voltage of 53 V, dark currents of maximum 0.7 nA, and a capacitance of 0.55 pF at 0.9 times the breakdown voltage. The spectral sensitivity of the fabricated APD was at least 0.8 A/W at a wavelength of 1550 nm. The temperature coefficient of the APD breakdown voltage was 85 mV/K.