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JOURNALS // Kvantovaya Elektronika // Archive
Kvantovaya Elektronika, 2001 Volume 31, Number 7, Pages 565–566 (Mi qe2004)
This article is cited in 3 papers

Letters

Structural transitions in GaAs during irradiation by a 100-fs laser pulse

S. I. Kudryashov, V. I. Emel'yanov

Lomonosov Moscow State University, Faculty of Physics

Abstract: It is shown experimentally for the first time that the pumping of a GaAs sample by a 100-fs laser pulse causes plasma-induced bandgap collapse and 'cold' melting of the material during the pulse.

PACS: 78.40.Fy, 78.47.+p

Received: 20.03.2001


 English version: Quantum Electronics, 2001, 31:7, 565–566

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