A. Yu. Abazadze, V. V. Bezotosnyi, T. G. Gur'eva, E. I. Davydova, I. D. Zalevskii, G. M. Zverev, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, V. A. Shishkin, “150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics”, Kvantovaya Elektronika, 2001, Volume 31, Number 8,Pages <nobr>659

This article is cited in 5 papers

Letters

150-W, 808-nm quasi-cw diode arrays based on AlGaAs/GaAs heterostructures with improved thermal characteristics

A. Yu. Abazadze^a, V. V. Bezotosnyi^b, T. G. Gur'eva^a, E. I. Davydova^a, I. D. Zalevskii^a, G. M. Zverev^a, A. V. Lobintsov^a, A. A. Marmalyuk^a, S. M. Sapozhnikov^a, V. A. Simakov^a, M. B. Uspenskiy^a, V. A. Shishkin^a

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: Laser diode arrays emitting at 808 nm with extremely high output parameters are manufactured. The 150-W output power of diode arrays at a pumping current of 146 A and a pulse duration of 0.2 ms is limited by the power supply current. The external differential quantum efficiency measured from the output mirror was 80%, and the maximum total efficiency was 51%.

PACS: 42.55.Px, 42.60.Lh

Received: 28.06.2001