V. V. Randoshkin, M. I. Belovolov, N. V. Vasil'eva, K. A. Zykov-Myzin, A. M. Saletskii, N. N. Sysoev, A. N. Churkin, “Luminescence of Nd-doped epitaxial single-crystal garnet films grown on Gd3Ga5O12 substrates”, Kvantovaya Elektronika, 2001, Volume 31, Number 9,Pages 799

This article is cited in 3 papers

Active media. Lasers

Luminescence of Nd-doped epitaxial single-crystal garnet films grown on Gd₃Ga₅O₁₂ substrates

V. V. Randoshkin^a, M. I. Belovolov^b, N. V. Vasil'eva^a, K. A. Zykov-Myzin^b, A. M. Saletskii^c, N. N. Sysoev^c, A. N. Churkin^c

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
^c Lomonosov Moscow State University, Faculty of Physics

Abstract: Epitaxial films with the atomic concentration of neodymium varied in the range from 1 to 15 % were grown on Gd₃Ga₅O₁₂ substrates with the orientation (111) by the method of liquid-phase epitaxy from a PbO – B₂O₃ overcooled melt solution. The absorption spectra of the films are recorded and their luminescence spectra and luminescence lifetimes of active ions are measured upon diode laser pumping. The concentration dependence of the luminescence lifetime of Nd³⁺ ions is determined.

PACS: 32.50.Jr, 32.50.+d, 78.66.Nk

Received: 23.04.2001