P. G. Eliseev, S. V. Gastev, A. Koizumi, Y. Fujiwara, Y. Takeda, “Stimulated emission from GaAs:Er, O at 1538 nm”, Kvantovaya Elektronika, 2001, Volume 31, Number 11,Pages <nobr>962

This article is cited in 3 papers

Lasers and laser media

Stimulated emission from GaAs:Er, O at 1538 nm

P. G. Eliseev^a, S. V. Gastev^b, A. Koizumi^c, Y. Fujiwara^c, Y. Takeda^c

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Ioffe Institute, St. Petersburg
^c Nagoya University, Japan

Abstract: Spontaneous emission and optical gain are studied in MOCVD-grown epitaxial layers of GaAs co-doped with erbium and oxygen. Optimal growth conditions are used to obtain the high erbium concentrations up to 8 × 10¹⁸ cm^-3. The measurements by the Shaklee – Leheny method revealed the optical gain ~45 cm^-1 at rather low pump intensity ~0.1 kW cm^-2 77 K.

PACS: 42.55.Px, 42.60.Lh

Received: 29.08.2001