Yu. M. Andreev, V. V. Badikov, V. G. Voevodin, L. G. Geiko, P. P. Geiko, M. V. Ivashchenko, A. I. Karapuzikov, I. V. Sherstov, “Radiation resistance of nonlinear crystals at a wavelength of 9.55 μm”, Kvantovaya Elektronika, 2001, Volume 31, Number 12,Pages <nobr>1075

This article is cited in 43 papers

Interaction of laser radiation with matter. Laser plasma

Radiation resistance of nonlinear crystals at a wavelength of 9.55 μm

Yu. M. Andreev^a, V. V. Badikov^b, V. G. Voevodin^c, L. G. Geiko^a, P. P. Geiko^a, M. V. Ivashchenko^d, A. I. Karapuzikov^d, I. V. Sherstov^d

^a Institute of Monitoring of Climatic and Ecological Systems, Siberian Branch of the Russian Academy of Science, Tomsk
^b Krasnodar State University, Laboratory of the latest technologies
^c Siberian Physicotechnical Institute, Tomsk
^d Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk

Abstract: The results of radiation resistance measurements for twelve nonlinear crystals are presented. The crystals include the well-known nonlinear CdGeAs₂, ZnGeP₂, AgGaSe₂, GaSe, AgGaS₂, and Ag₃AsS₃ crystals operating in the middle IR range, new mixed AgGaGeS₄ and Cd_0.35Hg_0.65Ga₂S₄ crystals, two-phase (orange and yellow) HgGa₂S₄ crystal, and the doped GaSe:In crystal. The mixed crystals and the two-phase HgGa₂S₄ crystal are transparent in the range from 0.4 – 0.5 to 11.5 – 14.5 μm. The measurements were performed using a pulsed single-mode highly stability TEA CO₂ laser with an output pulse duration of ~30 ns. The damage thresholds of new nonlinear AgGaGeS₄ and Cd _0.35Hg_0.65Ga₂S₄ crystals and of the HgGa₂S₄ crystal (the orange and yellow phases) were found to be 1.5 – 2.2 times higher than for the crystals operating in the middle IR range.

PACS: 42.55.Px, 42.60.Jf

Received: 15.05.2001
Revised: 18.09.2001