L. I. Burov, I. N. Varaksa, S. V. Voitikov, M. I. Kramar, A. G. Ryabtsev, G. I. Ryabtsev, “Effect of amplified luminescence on the lasing threshold of long-wavelength injection lasers”, Kvantovaya Elektronika, 2002, Volume 32, Number 3,Pages <nobr>260

This article is cited in 5 papers

Lasers

Effect of amplified luminescence on the lasing threshold of long-wavelength injection lasers

L. I. Burov^a, I. N. Varaksa^a, S. V. Voitikov^b, M. I. Kramar^b, A. G. Ryabtsev^a, G. I. Ryabtsev^b

^a Belarusian State University, Minsk
^b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk

Abstract: By solving radiation-transfer equations, we studied the effect of amplified luminescence on the lasing threshold of long-wavelength injection InGaAsP/InP lasers with bulk and quantum-well active layers emitting in the range from 1.3 to 1.55 μm. The amplified luminescence trapped in the resonator of a stripe laser can result in an increase in the threshold current density by a factor of two and more. It is shown that the effect of amplified luminescence on the temperature dependence of the threshold current is most pronounced in longer-wavelength lasers and, all other factors being the same, in lasers with a quantum-well active layer.

PACS: 42.55.Px, 42.60.Lh

Received: 03.10.2001