Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers

The characteristics of single-frequency lasers are investigated experimentally and theoretically. It is shown that the model of spectral hole burning with a varying interband relaxation time adequately describes the spectral and modulation characteristics of the laser (taking into account the transport of carriers). The time of carrier capture in a quantum well is 4 ps and the time of their escape is 80 ps.