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Kvantovaya Elektronika, 2002 Volume 32, Number 12, Pages 1085–1098 (Mi qe2351)

This article is cited in 5 papers

Special issue devoted to the 80th anniversary of academician N. G. Basov's birth

Semiconductor lasers: from homojunctions to quantum dots

P. G. Eliseevab

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Centre for High Technology Materials, University of New Mexico, USA

Abstract: A brief review of the development of physics and technology of semiconductor lasers, beginning from theoretical proposals made in the late 1950s up to now, is presented. For example, the threshold current density at room temperature, which was 105 – 106 A cm-2 in 1963, has been now reduced to ~10 A cm-2. The main factors that have provided this progress are considered. The mechanisms of energy conversion determining the high efficiency of semiconductor lasers are discussed in detail.

PACS: 42.55.Px, 42.60.Lh

Received: 20.09.2002


 English version:
Quantum Electronics, 2002, 32:12, 1085–1098

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