V. V. Popovichev, E. I. Davydova, A. A. Marmalyuk, A. V. Simakov, M. B. Uspenskiy, A. A. Chel'nyi, A. P. Bogatov, A. E. Drakin, S. A. Plisyuk, A. A. Stratonnikov, “High-power single-transverse-mode ridge optical waveguide semiconductor lasers”, Kvantovaya Elektronika, 2002, Volume 32, Number 12,Pages <nobr>1099

This article is cited in 21 papers

Special issue devoted to the 80th anniversary of academician N. G. Basov's birth

High-power single-transverse-mode ridge optical waveguide semiconductor lasers

V. V. Popovichev^a, E. I. Davydova^a, A. A. Marmalyuk^a, A. V. Simakov^a, M. B. Uspenskiy^a, A. A. Chel'nyi^a, A. P. Bogatov^b, A. E. Drakin^b, S. A. Plisyuk^c, A. A. Stratonnikov^c

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^c Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region

Abstract: More than 200 mW of a single-transverse-mode cw output power is produced from a semiconductor heterolaser by optimising the waveguide properties of its ridge structure. The laser-beam divergence is close to the diffraction limit and its brightness exceeds 5 × 10⁷ W cm^-2 sr^-1. The calculated and experimental parameters of the laser beam are coincident with a high accuracy, which allows their reliable simulation.

PACS: 42.55.Px, 42.60.Da, 42.60.Jf

Received: 04.10.2002