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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2003 Volume 33, Number 6, Pages 474–484 (Mi qe2439)

This article is cited in 12 papers

Invited paper

Penning high-pressure lasers on the 3p – 3s transitions in neon emitting at 703 and 920 nm

D. A. Zayarnyi, I. V. Kholin

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: High-pressure lasers with Penning depletion of lower laser levels on the 3p – 3s transitions in neon pumped by a fast electron beam are studied. High-power lasing at 703.2 and 724.5 nm on transitions that were not investigated earlier is reported for the first time. The energy parameters of lasers pumped by an electron beam with a current density of 1.7 A cm-2 are optimised (including the 585.2-nm laser) and the lasing dynamics of these lasers, as well as the dynamics of the small-signal gain and induced ('hot') absorption gain are studied.

PACS: 42.55.Lt, 42.60.Lh

Received: 07.10.2002
Revised: 30.01.2003


 English version:
Quantum Electronics, 2003, 33:6, 474–484

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© Steklov Math. Inst. of RAS, 2024