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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2003 Volume 33, Number 6, Pages 471–473 (Mi qe2446)

This article is cited in 16 papers

Letters

Superbroadband high-power superluminescent diode emitting at 920 nm

D. S. Mamedova, V. V. Prokhorova, S. D. Yakubovichb

a Superlum Diodes Ltd., Moscow
b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)

Abstract: The physical parameters of superluminescent diodes (SLDs) based on a single-layer quantum-well heterostructure with the (InGa)As active layer and a graded-index waveguide are studied. The power at the output of a single-mode fibre aligned with respect to the diode was 1 – 10 mW in the regime of spatially homogeneous injection depending on the length of the SLD active channel. The width of the emission spectrum was 100 – 110 nm, corresponding to the coherence length 7.6 – 8.8 μm.

PACS: 42.55.Px, 42.62.-b

Received: 14.01.2003


 English version:
Quantum Electronics, 2003, 33:6, 471–473

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© Steklov Math. Inst. of RAS, 2025