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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2003 Volume 33, Number 10, Pages 861–868 (Mi qe2515)

This article is cited in 3 papers

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Interferometric study of electronic changes in the refractive index of a Nd:YAG laser crystal caused by intense pumping

O. L. Antipov, O. N. Eremeykin, A. P. Savikin

Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: Changes in the refractive index of a Nd:YAG laser crystal caused by intense pumping are measured using a polarisation interferometer. A significant electronic component in the refractive-index changes associated with the excitation of the 4F3/2 electronic level of Nd3+ ions is revealed in the crystal pumped by 808-nm radiation of a pulsed diode array. An appreciable increase in the electronic component of the refractive index, which is caused by the population of the 2F(2)5/2 high-energy level, is observed in a Nd:YAG crystal additionally pumped by a 266-nm laser beam. Analytic calculations show that the short-wavelength 4f–5d transitions provide a predominant contribution to the polarisability of excited Nd3+ ions at the 1064.2-nm lasing transition.

PACS: 42.70.Hj, 42.55.Rz, 42.25.Gy

Received: 21.04.2003


 English version:
Quantum Electronics, 2003, 33:10, 861–868

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