Laser deposition of ZnO films on silicon and sapphire substrates

Laser deposition of zinc oxide films is studied. An intermediate screen is used to prevent microparticles formed during laser ablation of the target from falling on the film. The effect of deposition conditions on the morphology of the film, its electrical properties and crystal structure is studied. It is shown that the laser deposition technique can be used to obtain films of both types. The resistivity of the films was 0.07 Ω cm for films with the n-type conduction and 0.08 Ω cm for films with the p-type conduction. The photoluminescence studies of the films have shown that stimulated radiation is generated in the films under pump intensity exceeding 6 MW cm^-2.