RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1994 Volume 21, Number 12, Pages 1137–1140 (Mi qe258)

This article is cited in 1 paper

Lasers

Spectral characteristics of single-frequency quantum-well heterolasers

V. P. Konyaev, V. D. Kurnosov, V. N. Luk'yanov, A. G. Plyavenek, M. V. Shramenko, S. D. Yakubovich

Joint Laboratory of Optoelectronics VNIIOFI/MIREA Moscow

Abstract: Precision measurements and a comparative analysis were made of the emission spectra of GaAs\/AIGaAs and InGaAs\/GaAs heterostructure injection lasers with quantum-well active layers and plane—plane cleaved cavities. Attention was focused on the correlation between the linewidth enhancement factor and the parameters of single-frequency lasing. Single-frequency emission at λ = 975 nm was observed for a quantum-well laser with strained active layers and a cw output power in excess of 100 mW was reached when the side longitudinal modes were suppressed by more than 30 dB.

PACS: 42.55.Px, 73.20.Dx, 78.45.+h

Received: 17.03.1994


 English version:
Quantum Electronics, 1994, 24:12, 1054–1057

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024