High-power superluminescent diodes with non-injection output sections

Superluminescent diodes based on a separate-confinement (GaAl)As heterostructure are studied in the 850-nm spectral region. A contact p⁺-GaAs layer in the output sections of a narrow active channel of width 4 μm was removed and a metal contact was not deposited. These sections played the role of saturable absorbers. This design provided a significant increase in the catastrophic optical damage threshold and ensured 250 mW of output cw power at the diode facet. The power coupled out through a single-mode fibre in the case of a simplest coupling achieved 110 mW.