Single-mode ridge lasers fabricated in an inductively coupled plasma source

The parameters of 0.98-μm laser diodes with a narrow ridge waveguide fabricated by low-energy ion – chemical etching using an inductively coupled plasma source are studied. It is shown statistically that, when the geometrical parameters of ridge waveguides correspond to the results of calculations, the production of acceptable 150–200-mW diodes can achieve 78%. It is found that the optical properties of a waveguide in the perpendicular direction substantially affect the percent of production of diodes with a specified output power. When conventional SiO₂–ZrO₂ optical coatings were used, the maximum single-mode power (220–230 mW) was limited by the degradation of mirror faces.