M. M. Zverev, D. V. Peregoudov, I. V. Sedova, S. V. Sorokin, S. V. Ivanov, P. S. Kop'ev, “Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers”, Kvantovaya Elektronika, 2004, Volume 34, Number 10,Pages <nobr>909

This article is cited in 12 papers

Lasers

Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

M. M. Zverev^a, D. V. Peregoudov^b, I. V. Sedova^c, S. V. Sorokin^c, S. V. Ivanov^c, P. S. Kop'ev^c

^a State Research Center of Russian Federation "Troitsk Institute for Innovation and Fusion Research"
^b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
^c Ioffe Institute, St. Petersburg

Abstract: The parameters of 494–555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8–30-keV electron beam are studied. The minimum threshold current density (0.6–0.8 A cm^-2 at room temperature) is obtained for a structure with the active region consisting of a ZnSe quantum well with a CdSe fractional monolayer insertion.

PACS: 42.55.Px, 42.60.Lh

Received: 28.06.2004