Implantation of high-energy ions produced by femtosecond laser pulses

Germanium ions of an expanding plasma were implanted in a silicon collector. The plasma was produced by a femtosecond laser pulse with an intensity of ~10¹⁵ W cm^-2 at the surface of the solid-state target. A technique was proposed for determining the energy characteristics of the ion component of the laser plasma from the density profile of the ions implanted in the substrate.