RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2004 Volume 34, Number 12, Pages 1127–1132 (Mi qe2788)

This article is cited in 2 papers

Active media

Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity

P. G. Eliseevab, J. Leeb, M. A. Osinskib

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Centre for High Technology Materials, University of New Mexico, USA

Abstract: Some radiative and electric properties of heterostructures based on semiconductor nitrides emitting in the visible and UV regions are considered. The following anomalous properties of UV-emitting heterostructures are studied: the low-temperature emission quenching, a strong non-ideality of I–V curves, and the increase in the slope of these characteristics upon cooling. The anomalous emission quenching is especially typical for ~3-nm thick single-quantum-well structures, but it is absent in a 50-nm thick double heterostructure. It seems that this difference is caused by the fact that the capture of carriers at the levels in quantum wells slows down upon cooling, and a 'through' injection of carriers occurs into the opposite emitter layer. In addition, electrons injected into the p region reduce its resistance. The consideration of the injection-induced conductivity in the passive layer allows us to explain satisfactorily the electric anomalies.

PACS: 42.55.Px, 78.20.Jq

Received: 08.07.2004


 English version:
Quantum Electronics, 2004, 34:12, 1127–1132

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025