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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2004 Volume 34, Number 9, Pages 875–877 (Mi qe2885)

This article is cited in 2 papers

Laser applications and other topics in quantum electronics

Photoreflection from a locally optically pumped semiconductor laser structure

M. A. Chernikova, A. E. Sotnikova, O. A. Ryabushkinb, P. A. Trubenkoc, I. Berishchevc, A. Ovchinnikovc

a IRE-Polus Research and Technology Association, Fryazino, Moscow Region
b Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
c IPG Photonics Corporation, USA

Abstract: The AlGaAs/GaAs laser heterostructure with the InGaAs quantum well is studied by the contactless photoreflection method upon local optical pumping. Unlike the conventional photoreflection method, regions on the sample surface illuminated by the probe and pump light are spatially separated. The method allows one to separate photoluminescence and photoreflection signals and to construct the three-dimensional energy band diagram of the laser structure.

PACS: 42.55.Px, 42.62.Fi, 78.40.-q

Received: 25.02.2004
Revised: 01.07.2004


 English version:
Quantum Electronics, 2004, 34:9, 875–877

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