D. V. Batrak, S. A. Bogatova, A. V. Borodaenko, A. E. Drakin, A. P. Bogatov, “Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers”, Kvantovaya Elektronika, 2005, Volume 35, Number 4,Pages <nobr>316

This article is cited in 6 papers

Lasers

Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers

D. V. Batrak^a, S. A. Bogatova^b, A. V. Borodaenko^b, A. E. Drakin^a, A. P. Bogatov^a

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region

Abstract: The spectral profile of the optical gain and the spectral dependence of the coefficient characterising the variation in the refractive index with a carrier concentration are calculated using the three-band model for an active quantum-well InGaAs layer. A comparison of the theoretical results with the experimental data gave values of parameters allowing the numerical simulation of the material parameters of the active layer with a high degree of accuracy.

PACS: 42.55.Px, 42.60.Lh

Received: 22.10.2004