E. G. Golikova, V. P. Duraev, S. A. Kozikov, V. G. Krigel, O. A. Labutin, V. I. Shveikin, “Quantum-well InGaAsP\/InP lasers”, Kvantovaya Elektronika, 1995, Volume 22, Number 2,Pages <nobr>105

This article is cited in 1 paper

Lasers

Quantum-well InGaAsP\/InP lasers

E. G. Golikova^a, V. P. Duraev^b, S. A. Kozikov^a, V. G. Krigel^a, O. A. Labutin^a, V. I. Shveikin^a

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b "Nolatech" Joint-Stock Company, Moscow

Abstract: An investigation is reported of InGaAsP\/InP heterojunction lasers (emitting at 1.55 μm) with quantum-well layers formed by MOCVD epitaxy. A description is given of the geometry of the quantum-well layers. The Auger electron profile and the watt—ampere characteristics are reported. The main parameters of these quantum-well lasers are analysed and it is shown that they have low threshold currents, a narrow luminescence spectrum, and low optical losses (less than 13 cm^–1). Moreover, their characteristic temperature is higher than that of lasers made from bulk crystals.

PACS: 42.55.Px, 42.60.Lh