O. V. Bogdankevich, M. M. Zverev, A. N. Mestvirishvili, A. S. Nasibov, A. N. Pechenov, A. I. Svinenkov, K. P. Fedoseev, “Electron-beam-pumped high-power semiconductor laser”, Kvantovaya Elektronika, 1971, Number 2,Pages <nobr>92

Brief Communications

Electron-beam-pumped high-power semiconductor laser

O. V. Bogdankevich, M. M. Zverev, A. N. Mestvirishvili, A. S. Nasibov, A. N. Pechenov, A. I. Svinenkov, K. P. Fedoseev

Abstract: Many-element gallium arsenide and cadmium sulfide structures, pumped by electron-beam bombardment, were investigated with the aim of increasing output power. A power output of 1.5 MW was achieved for a gallium arsenide laser excited by bombardment with a 300-A beam of electrons of 300-keV energy.

UDC: 621.378.35

PACS: 42.55.Px, 42.60.Jf, 42.60.Lh

Received: 13.10.1970