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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1971 Number 3, Pages 23–28 (Mi qe3065)

Laser optron

V. V. Nikitin, V. D. Samoilov


Abstract: The results are given of an investigation of an optron consisting of an inhomogeneously excited injection laser and a photodiode. It is shown that such a laser optron is a beam-of-light transistor with a power gain of 102. Such an optron can be used in optical data processing.

UDC: 621.378.329

PACS: 42.79.Ta, 42.79.Hp, 42.55.Px, 85.60.Dw

Received: 11.09.1970


 English version:
Soviet Journal of Quantum Electronics, 1971, 1:3, 219–223


© Steklov Math. Inst. of RAS, 2025