Yu. P. Yakovlev, A. N. Baranov, A. N. Imenkov, V. V. Sherstnev, E. V. Stepanov, Ya. Ya. Ponurovskii, “InAsSb/InAsSbP injection lasers for high-resolution spectroscopy”, Kvantovaya Elektronika, 1993, Volume 20, Number 9,Pages <nobr>839

This article is cited in 6 papers

Lasers

InAsSb/InAsSbP injection lasers for high-resolution spectroscopy

Yu. P. Yakovlev^a, A. N. Baranov^a, A. N. Imenkov^a, V. V. Sherstnev^a, E. V. Stepanov^b, Ya. Ya. Ponurovskii^b

^a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
^b General Physics Institute, Russian Academy of Sciences, Moscow

Abstract: Experimental results demonstrate that tunable semiconductor injection lasers based on InAsSb/InAsSbP that emit in the spectral region λ = 3.2 to 3.4 μm can be fabricated. Lasers of this kind have been used for high-resolution molecular spectroscopy at working temperatures of 77 to 160 K. Absorption spectra obtained for methane and ethylene molecules reveal the most important spectroscopic properties of these lasers, including the range of continuous frequency tuning, the tuning rate, the spectral resolution, and the signal-to-noise ratio.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Jf, 42.60.Fc, 42.62.Fi