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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1971 Number 5, Pages 97–99 (Mi qe3256)

This article is cited in 8 papers

Brief Communications

Dependence of the stimulated emission threshold of injection lasers on the duration of pumping current pulses

V. A. Gorbylev, G. T. Pak, A. I. Petrov, N. P. Chernousov, V. I. Shveikin, I. V. Yashumov


Abstract: An experimental investigation was made of the dependence of the stimulated emission threshold of GaAs–AlAs injection lasers on the duration of pumping pulses in the 2–100 nsec range. The effective lifetime of the injected electrons was determined for lasers with one diffused ðn junction (~1 nsec), with one heterojunction (~2.5 nsec), and with two heterojunctions (3–6 nsec).

UDC: 621.378.35

PACS: 42.55.Px, 42.55.Ah, 42.65.Re, 42.60.Jf

Received: 22.02.1971
Revised: 06.05.1971


 English version:
Soviet Journal of Quantum Electronics, 1972, 1:5, 505–507


© Steklov Math. Inst. of RAS, 2024