Abstract:
A study was made of the influence of small gamma and gamma–neutron radiation doses (~103–104 R) on the parameters of InGaAsP/InP and AlGaAs/GaAs laser heterostructures. Irradiation with gamma-ray doses up to 103 R and with neutron doses up to ~1014 cm–2 reduced the threshold current by 5–15%. A study was made of the micromechanisms of the radiation degradation of laser heterostructures and of possible applications of the radiation technology in the development of radiation-stable injection lasers.