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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1992 Volume 19, Number 10, Pages 1024–1031 (Mi qe3640)

This article is cited in 4 papers

Fiber and integrated optics

Directional pattern and other output properties of a quantum-well injection laser for the 780-nm spectral region

E. I. Davydova, A. E. Drakin, P. G. Eliseev, G. T. Pak, V. V. Popovichev, M. B. Uspenskiy, S. E. Khlopotin, V. A. Shishkin


Abstract: An optical model is constructed for a GaAlAs/GaAs stripe-geometry laser heterostructure with a ridge-waveguide configuration in the p-type emitter layer. This waveguide configuration provides lateral optical confinement. The directional characteristics of the output are found as a function of the parameters of the structure. The quantum-well active layer is in a three-layer waveguide (in a separate-confinement structure). Laser structures were fabricated experimentally by MOCVD epitaxy followed by ion-chemical etching and vacuum deposition of zinc selenide on the mesa stripes. Low-threshold lasers with a cw, single-frequency power up to 40 μW were obtained. In single-spatial-mode operation, a power up to 80 μW was achieved at a wavelength of 780 nm. Windows of ZnSe were grown on the laser facets to improve the optical strength.

UDC: 373.621.8

PACS: 42.55.Px, 42.60.Jf, 81.15.Gh, 42.70.Hj, 42.60.By

Received: 17.03.1992


 English version:
Soviet Journal of Quantum Electronics, 1992, 22:10, 954–960

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