S. V. Davydov, I. I. Kulak, A. I. Mitskovets, A. A. Stavrov, A. P. Shkadarevich, G. P. Yablonskii, “Lasing in YAG:Nd3+ and KGdW:Nd3+ crystals pumped with semiconductor lasers”, Kvantovaya Elektronika, 1991, Volume 18, Number 1,Pages 20

Lasers

Lasing in YAG:Nd³⁺ and KGdW:Nd³⁺ crystals pumped with semiconductor lasers

S. V. Davydov, I. I. Kulak, A. I. Mitskovets, A. A. Stavrov, A. P. Shkadarevich, G. P. Yablonskii

Abstract: Lasing in crystals with narrow absorption bands was achieved for the first time by excitation with radiation emitted from electron-beam-pumped CdS_xSe_1–x semiconductor lasers. The lasing thresholds of YAG:Nd³⁺ and KGdW:Nd³⁺ crystals pumped with λ = 586 nm radiation were ~ 2 and ~ 1 mJ, respectively. The efficiency of conversion of the pump radiation into the output radiation in the KGdW:Nd³⁺ laser was 0.27%.

UDC: 621.373.826.038.825.2

PACS: 42.55.Rz, 42.60.By, 42.60.Lh, 42.70.Hj

Received: 25.05.1990