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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1991 Volume 18, Number 3, Pages 298–300 (Mi qe3777)

This article is cited in 2 papers

Solid-state and semiconductor lasers

Stimulated emission from a neodymium-doped gadolinium gallium garnet crystal due to the 4F3/24I13/2 (λ = 1.33 μm) transition

M. E. Doroshenko, V. V. Osiko, V. B. Sigachev, M. I. Timoshechkin


Abstract: The development of a neodymium-doped gadolinium gallium garnet (GGG:Nd) crystal laser utilizing the 4F3/24I13/2 transition (lasing wavelength λ = 1330 nm) is reported. A GGG:Nd crystal 8 mm in diameter and 80 mm long was operated under free-running multimode conditions, using an exit mirror with the reflection coefficient R = 81%. The lasing threshold was 5 J and the differential efficiency was 1.54%. A pump pulse of energy Ep = 34.2 J generated a laser radiation pulse of energy El = 417 mJ. When the pump pulse repetition frequency was 50 Hz and the energy was 64 J, the average free-running power was ~ 40 W. The experimental dependences El (Ep, R) were used to estimate the loss factor κ, the lasing transition cross section σ, and the maximum differential efficiency η0. The following values of these parameters were obtained: κ ≈ 0.09, σ = (1.1 ± 0.2) X 10–19 cm2, and η0 = 2.2%.

UDC: 621.373.826.038.825.2

PACS: 42.55.Rz, 42.70.Hj, 42.60.Jf, 42.60.Lh

Received: 19.10.1990


 English version:
Soviet Journal of Quantum Electronics, 1991, 21:3, 266–268

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© Steklov Math. Inst. of RAS, 2024