V. A. Gorbylev, M. V. Zverkov, O. A. Labutin, A. I. Petrov, A. A. Chel'nyi, V. I. Shveĭkin, “Laser diode emitting cw 663 nm radiation at room temperature”, Kvantovaya Elektronika, 1991, Volume 18, Number 7,Pages <nobr>824

Physical processes in lasers

Laser diode emitting cw 663 nm radiation at room temperature

V. A. Gorbylev, M. V. Zverkov, O. A. Labutin, A. I. Petrov, A. A. Chel'nyi, V. I. Shveĭkin

Abstract: A laser diode emitting cw radiation at room temperature was made from a double AlGaInP/GaInP/AlGaInP heterostructure grown epitaxially by the metallorganic chemical vapor deposition method. The emission wavelength was in the visible range (663 nm). The threshold current was less than 90 mA (threshold current density less than 5 kA/cm²). This laser diode had a characteristic temperature of 40 K.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Pk, 42.60.Jf, 81.15.Gh, 81.15.Kk

Received: 01.02.1991