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Kvantovaya Elektronika, 2005 Volume 35, Number 6, Pages 504–506 (Mi qe4096)

This article is cited in 4 papers

Lasers

Broadband highly bright radiation sources based on a superluminescent diode and a semiconductor optical amplifier

V. V. Prokhorova, D. S. Shvakova, S. D. Yakubovichb

a Superlum Diodes Ltd., Moscow
b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)

Abstract: It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confinement double (InGa)PAs heterostructures emitting at 1300 nm and different SLDs as input radiation sources, there were obtained up to 50 mW of cw power at the output of a single-mode fibre and the emission band with the half-width up to 70 nm.

PACS: 42.55.Px, 42.60.Jf

Received: 14.03.2005


 English version:
Quantum Electronics, 2005, 35:6, 504–506

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© Steklov Math. Inst. of RAS, 2024