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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1983 Volume 10, Number 2, Pages 423–425 (Mi qe4108)

Brief Communications

Influence of the inhomogeneity of the process of energy deposition on the gain coefficient of high-power gas lasers

V. M. Baginskiĭ, V. N. Gorshkov, A. I. Shchedrin


Abstract: A calculation is made of the distribution of the small-signal gain coefficient over a small aperture in a transverse section of a discharge chamber of a high-power CO2 gas laser with a non-self-sustained discharge. It is shown that, in spite of a considerable inhomogeneity of the specific energy deposited in the discharge between the cathode and the anode, the gain coefficient of such systems can be practically constant for certain pump times. This equalization of the gain coefficient is due to an increase in temperature and a corresponding change in the relaxation constants in the region where the rate of energy deposition is high.

UDC: 621.373.826.038.823

PACS: 42.55.Dk

Received: 12.02.1982


 English version:
Soviet Journal of Quantum Electronics, 1983, 13:2, 238–240

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© Steklov Math. Inst. of RAS, 2024