Integrated-optics photodetector utilizing the external photoelectric effect in a Schottky barrier

An investigation was made of the possibility of using the photoelectric effect in a Schottky barrier at a metal–semiconductor interface for detection of waveguide radiation. The dependences of the photocurrent and photo-emf on the power at the entry to such a photodetector were determined for GaAs_xP_1–x–GaP waveguide structures with barriers formed at gold and silver contacts, and the quantum efficiency was calculated.