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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1983 Volume 10, Number 3, Pages 647–649 (Mi qe4177)

Brief Communications

XeF* visible laser with selective optical excitation

V. M. Buchnev, A. D. Klementov, V. M. Nesterov, S. A. Pendyur, P. B. Sergeev, B. N. Toleutaev, S. V. Shul'ga


Abstract: The coefficient representing utilization of the electron beam energy (K ~2.3×10–3) in dissociation of XeF2 vapor was determined. This dissociation occurred under the action of selective radiation emitted from electron-beam-excited Xe*2 dimers. Lasing was observed as a result of the C–A transition in the XeF* molecule (λ = 480 nm) and the output energy was 3.1 mJ.

UDC: 621.373.8.038.84

PACS: 42.55.Fn

Received: 03.05.1982


 English version:
Soviet Journal of Quantum Electronics, 1983, 13:3, 394–395

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© Steklov Math. Inst. of RAS, 2024